AbstractWe report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley–Read–Hall recombination originating from elimination of point defects. For annealing temperatures up to 500°C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for ph...
Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral ...
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epita...
The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus...
We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In...
AbstractWe report a substantial increase in the quality and photoluminescence (PL) emission efficien...
We report the molecular beam epitaxial growth of narrow gap dilute nitride InAsN alloys onto GaAs su...
This project investigates dilute nitrides such as InAsN and InGaAsN with a view to the fabrication o...
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural prope...
This thesis describes the effects of the combined incorporation of nitrogen (N) and hydrogen (H) ato...
A new approach to room temperature mid-infrared applications in the 3 -5 µm spectral range has been ...
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural prope...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum we...
The effect of post-growth rapid thermal annealing on the optical characteristics of InAsN/InGaAs dot...
Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam ep...
Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral ...
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epita...
The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus...
We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In...
AbstractWe report a substantial increase in the quality and photoluminescence (PL) emission efficien...
We report the molecular beam epitaxial growth of narrow gap dilute nitride InAsN alloys onto GaAs su...
This project investigates dilute nitrides such as InAsN and InGaAsN with a view to the fabrication o...
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural prope...
This thesis describes the effects of the combined incorporation of nitrogen (N) and hydrogen (H) ato...
A new approach to room temperature mid-infrared applications in the 3 -5 µm spectral range has been ...
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural prope...
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiode...
In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum we...
The effect of post-growth rapid thermal annealing on the optical characteristics of InAsN/InGaAs dot...
Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam ep...
Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral ...
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epita...
The III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus...