Hydrogen Sensing Properties of Thin NiO Films Deposited by RF Sputtering
- Guziewicz, M.
- Klata, P.
- Grochowski, J.
- Golaszewska, K.
- Kaminska, E.
- Domagala, J.Z.
- Witkowski, B.A.
- Kandyla, M.
- Chatzimanolis, Ch.
- Kompitsas, M.
- Piotrowska, A.
DOIAbstract
AbstractElectrical properties of p-NiO films fabricated by RF magnetron sputtering were studied for hydrogen sensor applications. A response of sheet resistance to hydrogen concentration in air has been measured at elevated temperature. Significant changes in sheet resistance of NiO films were observed even for H2 concentration of a few ppm in air. The sensibility of NiO films to hydrogen trace was further increased by Pd clusters deposited on the NiO surface. The best sensibility result achieved on the NiO film was: 0.3 ppm of H2 in air at 145̊C
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