AbstractThis paper introduces a configuration aimed at switching losses reduction through a power leg constructed by combining a MOSFET and an IGBT. The combined use of these different switches leads to the turn-on losses reduction through the use of the faster freewheeling diode of the IGBT, and the turn-off losses reduction through use of the MOSFET’s lower losses because of the lack of tailing current, typical for IGBT’s. The introduced leg structure can be used to build single phase – full bridge invertors or three phase inverters. The proposed leg is realized, experimented and validated
In the present time, electrical power conversion is performed more and more widely using fully-contr...
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power...
The paper describes the types of multilevel pulse-width modulation, as well as methods for obtaining...
AbstractThis paper introduces a configuration aimed at switching losses reduction through a power le...
This paper introduces a configuration aimed at switching losses reduction trough a power leg constru...
This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested co...
A novel solution for last generation power MOSFETs is proposed for the first time to reduce commutat...
Abstract:- Modern power electronic equipment (inverters, converters, switching mode amplifiers, etc....
A variety of power devices are available to designers, each with specific advantages and limitations...
Usually the top and bottom IGBT devices in an inverter leg are of the same make (i.e. from same manu...
This paper presents a new three-phase four-leg voltage source inverter (VSI), which achieves a high ...
In high voltage and current applications, the power switch, IGBT has become more attractive due to i...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomot...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power...
The paper describes the types of multilevel pulse-width modulation, as well as methods for obtaining...
AbstractThis paper introduces a configuration aimed at switching losses reduction through a power le...
This paper introduces a configuration aimed at switching losses reduction trough a power leg constru...
This paper discusses power legs built upon the combination of a MOSFET and an IGBT. The suggested co...
A novel solution for last generation power MOSFETs is proposed for the first time to reduce commutat...
Abstract:- Modern power electronic equipment (inverters, converters, switching mode amplifiers, etc....
A variety of power devices are available to designers, each with specific advantages and limitations...
Usually the top and bottom IGBT devices in an inverter leg are of the same make (i.e. from same manu...
This paper presents a new three-phase four-leg voltage source inverter (VSI), which achieves a high ...
In high voltage and current applications, the power switch, IGBT has become more attractive due to i...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
6.5 kV level IGBT (Insulated Gate Bipolar Transistor) modules are widely applied in megawatt locomot...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
The use of insulated gate bipolar transistor (IGBT) switch in power electronic application and power...
The paper describes the types of multilevel pulse-width modulation, as well as methods for obtaining...