Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy

AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector de-vices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral charac-teristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id=3.38 nA at reverse bias Urev=5 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3613