AbstractChalcogenide glassy alloys of Se90Cd10−xInx (x=2, 4, 6, 8) are synthesized by melt quench technique. The prepared glassy alloys have been characterized by techniques such as differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX). Dielectric properties of Se90Cd10−xInx (x=2, 4, 6, 8) chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42Hz to 5MHz at room temperature. It is found that the dielectric constants ɛ′, dielectric loss factor ɛ″ and loss angle Tanδ depend on frequency. ɛ′, ɛ″ and loss angle Tanδ are found to be decreasing with the In content in Se90Cd10−xInx glassy system. AC conductivity of the prepared sample ha...
661-667DC electrical properties of the system Se100-X InX (where x =5, 10, 15 and 20 at. %) have ...
The temperature and frequency dependence of dielectric constant and loss is measured in glassy Se80T...
483-488The effect of Sn incorporation in the dielectric properties of two binary Se-Te glassy syste...
Chalcogenide glassy alloys of Se90Cd10−xInx (x = 2, 4, 6, 8) are synthesized by melt quench techniqu...
AbstractChalcogenide glassy alloys of Se90Cd10−xInx (x=2, 4, 6, 8) are synthesized by melt quench te...
Amorphous Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique....
539-543The frequency and temperature dependence of ac conductivity measurements have been made on (...
AbstractA detailed study of conduction mechanism of glassy Se70Te30 and Se70Te28M2 (M=Ag, Zn and Cd)...
The present work reports the temperature and frequency dependence of dielectric constant (ε′) and di...
A detailed study of conduction mechanism of glassy Se70Te30 and Se70Te28M2 (M = Ag, Zn and Cd) alloy...
Electrical conductivity of Se90-xTe5Sn5Inx (x = 0, 3, 6 and 9) glassy systems was studied employing ...
In the present study, investigations of dielectric parameters viz dielectric constant (), dielectric...
The effect of Cu additive on the dielectric relaxation of two binary Se-Te glassy systems, comparin...
55-58Frequency and temperature dependence of dielectric constant (') and dielectric loss ('') are s...
$Te_{42}As_{36}Ge_{10}Si_{12}$ chalcogenide composition was prepared by conventional melt-quenching....
661-667DC electrical properties of the system Se100-X InX (where x =5, 10, 15 and 20 at. %) have ...
The temperature and frequency dependence of dielectric constant and loss is measured in glassy Se80T...
483-488The effect of Sn incorporation in the dielectric properties of two binary Se-Te glassy syste...
Chalcogenide glassy alloys of Se90Cd10−xInx (x = 2, 4, 6, 8) are synthesized by melt quench techniqu...
AbstractChalcogenide glassy alloys of Se90Cd10−xInx (x=2, 4, 6, 8) are synthesized by melt quench te...
Amorphous Ge10−xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses were prepared by melt quench technique....
539-543The frequency and temperature dependence of ac conductivity measurements have been made on (...
AbstractA detailed study of conduction mechanism of glassy Se70Te30 and Se70Te28M2 (M=Ag, Zn and Cd)...
The present work reports the temperature and frequency dependence of dielectric constant (ε′) and di...
A detailed study of conduction mechanism of glassy Se70Te30 and Se70Te28M2 (M = Ag, Zn and Cd) alloy...
Electrical conductivity of Se90-xTe5Sn5Inx (x = 0, 3, 6 and 9) glassy systems was studied employing ...
In the present study, investigations of dielectric parameters viz dielectric constant (), dielectric...
The effect of Cu additive on the dielectric relaxation of two binary Se-Te glassy systems, comparin...
55-58Frequency and temperature dependence of dielectric constant (') and dielectric loss ('') are s...
$Te_{42}As_{36}Ge_{10}Si_{12}$ chalcogenide composition was prepared by conventional melt-quenching....
661-667DC electrical properties of the system Se100-X InX (where x =5, 10, 15 and 20 at. %) have ...
The temperature and frequency dependence of dielectric constant and loss is measured in glassy Se80T...
483-488The effect of Sn incorporation in the dielectric properties of two binary Se-Te glassy syste...