Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser deposited SrTiO3 films using high intensity variable energy positron annihilation lifetime spectroscopy (PALS) measurements. Film nonstoichiometry was varied by varying laser fluence. PALS showed that on increasing the fluence above the Ti/Sr similar to 1 value, the concentration ratio [V-Sr]/[V-Ti] systematically increased. Reducing the fluence into the Ti-poor region below resulted in additional vacancy cluster defect formation. Vacancy concentrations greater than similar to 50 ppm were observed in all films.</p
AbstractPositron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects...
Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 Au/LSMO/STO) heterostructure displaying electroresi...
The results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradia...
Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser...
Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser...
Vacancies are the dominant point defects in perovskite oxides, however, detecting and identifying th...
Accommodation of nonstoichiometry in SrTiO3 pulsed laser deposited (PLD) films was investigated usin...
Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown b...
Positron annihilation lifetime spectroscopy (PALS) measurements on high density ceramic SrTiO$_{3}$...
The application of variable energy positron annihilation spectroscopy (VE-PAS) methods to the study ...
Positron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects in sing...
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the gro...
We have carried out positron-annihilation spectroscopy to characterize the spatial distribution and ...
AbstractPositron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects...
Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 Au/LSMO/STO) heterostructure displaying electroresi...
The results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradia...
Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser...
Cation vacancies on both sublattices (V-Ti, V-Sr) have been identified in homoepitaxial pulsed laser...
Vacancies are the dominant point defects in perovskite oxides, however, detecting and identifying th...
Accommodation of nonstoichiometry in SrTiO3 pulsed laser deposited (PLD) films was investigated usin...
Variable energy positron annihilation lifetime spectroscopy of high-mobility La-doped SrTiO3 grown b...
Positron annihilation lifetime spectroscopy (PALS) measurements on high density ceramic SrTiO$_{3}$...
The application of variable energy positron annihilation spectroscopy (VE-PAS) methods to the study ...
Positron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects in sing...
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the gro...
We have carried out positron-annihilation spectroscopy to characterize the spatial distribution and ...
AbstractPositron annihilation lifetime spectroscopy (PALS) was applied to characterize point defects...
Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 Au/LSMO/STO) heterostructure displaying electroresi...
The results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradia...