We report a dual-wavelength passive mode locking regime where picosecond pulses are generated from both ground (lambda = 1263nm) and excited state transitions (lambda = 1180nm), in a GaAs-based monolithic two-section quantum-dot laser. Moreover, these results are reproduced by numerical simulations which provide a better insight on the dual-wavelength mode-locked operation. (C) 2010 Optical Society of America</p
Passively mode-locked lasers based on InAs/GaAs quantum dots have benefited from the unique properti...
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the gene...
In this contribution reverse emission state transition of a two-section quantum dot laser at a satur...
We report a dual-wavelength passive mode locking regime where picosecond pulses are generated from b...
The authors demonstrate stable mode locking that involves transitions within either the ground state...
We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/...
We present a modified version of the multi-section delayed differential equation (MS-DDE) model, for...
In this thesis, novel regimes of mode locking in quantum dot semiconductor laser diodes have been in...
The influence of different biasing conditions of a passively mode-locked strongly chirped two-sectio...
Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort...
Operation regimes of a two section monolithic quantum dot (QD) mode-locked laser are studied experim...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
We study the characteristics of wavelength tunable quantum-dot mode-locked lasers using a curved two...
We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quant...
Passively mode-locked lasers based on InAs/GaAs quantum dots have benefited from the unique properti...
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the gene...
In this contribution reverse emission state transition of a two-section quantum dot laser at a satur...
We report a dual-wavelength passive mode locking regime where picosecond pulses are generated from b...
The authors demonstrate stable mode locking that involves transitions within either the ground state...
We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/...
We present a modified version of the multi-section delayed differential equation (MS-DDE) model, for...
In this thesis, novel regimes of mode locking in quantum dot semiconductor laser diodes have been in...
The influence of different biasing conditions of a passively mode-locked strongly chirped two-sectio...
Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort...
Operation regimes of a two section monolithic quantum dot (QD) mode-locked laser are studied experim...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
This paper presents the current status of our research in mode-locked quantum-dot edge-emitting lase...
We study the characteristics of wavelength tunable quantum-dot mode-locked lasers using a curved two...
We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quant...
Passively mode-locked lasers based on InAs/GaAs quantum dots have benefited from the unique properti...
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the gene...
In this contribution reverse emission state transition of a two-section quantum dot laser at a satur...