Performance Evaluation of an Integrated Optoelectronic Receiver

AbstractThis work describes the optical and electrical characterization of an integrated optoelectronic receiver. The receiver is composed of a photodiode and a transimpedance amplifier, both fabricated in silicon technology using a 0.8μm BiCMOS process. The total area occupied by the photodiode is of 10,000μm2. In a first step, the generated photocurrent of the photodiode is measured for the wavelengths of 780nm and 830nm at different levels of optical power. In a second step, the responsivity and quantum efficiency parameters of the photodiode are computed. Finally, an electrical measurement including the transimpedance amplifier is achieved. A potential application for this optoelectronic receiver is on the first optical communications window