The effect of parasitic boron doping on P-type piezoresistors

AbstractAbsolute piezoresistive pressure sensors often use direct wafer bonding of SOI with the etched bulk silicon to provide us with sensitive membranes and sealed cavities. The advantage of such a process is that we can easily obtain a thin, monocrystalline silicon membrane with controlled thickness and a vacuum sealed cavity. However, few works have been reported on the electrical quality of this N-type membrane and its influence on performance of the P-type gauges. The problem of parasitic Boron appearance at the Si/SiO2 interface was only recently shown in BESOI wafers, but it becomes much more significant when creating the component at the bottom side of the device layer, like in the case of an absolute piezoresistive pressure sensor