ICNS-2 charts GaN's progress

AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second International Conference on Nitride Semiconductors’ ( ICNS-2), held in October 1997 in Tokushima City, Japan. With almost 500 registered attendees, this must rank as the largest nitride meeting held to date. Such a large attendance, particularly from the host country, serves to emphasize the rapidly growing technical and business interest in gallium nitride (GaN) and its compound alloys with indium and aluminium