AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fabrication of short wavelength optoelectronic and electronic devices, the II–VI materials are also showing great promise. In particular, the chalcogenides, such as sulphide and selenide compounds, have a long history as display materials for efficient light emission
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for curr...
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
AbstractDespite the success of III-nitride materials in the fabrication of short-wavelength emitters...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
Zinc selenide has been investigated for a candidate to a blue light emitting diode and a blue laser ...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
We report on the atmospheric pressure MOVPE growth and characterisation of ZnSe, ZnS and ZnSxSe1-x, ...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
Zinc Selenide (ZnSe) is a II-VI semiconductor with a band gap of 2.67 eV. The large bandgap makes it...
We have presented evidence that the blue emission band, which is dominant at room temperature in ZnS...
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for curr...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for curr...
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
AbstractDespite the success of III-nitride materials in the fabrication of short-wavelength emitters...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
Zinc selenide has been investigated for a candidate to a blue light emitting diode and a blue laser ...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
We report on the atmospheric pressure MOVPE growth and characterisation of ZnSe, ZnS and ZnSxSe1-x, ...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
This thesis describes a detail study of growth of high quality ZnSe based epitaxial materials co-dop...
Zinc Selenide (ZnSe) is a II-VI semiconductor with a band gap of 2.67 eV. The large bandgap makes it...
We have presented evidence that the blue emission band, which is dominant at room temperature in ZnS...
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for curr...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for curr...
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue...