Silicon anisotropic etching in KOH and TMAH with modified surface tension

AbstractEtching rates and morphologies of Si wafers with different crystallographic orientations etched in pure TMAH and TMAH with isopropyl alcohol have been analysed. IPA addition caused significant improvement in the morphology of some etched surfaces. Similar effects had been already observed in KOH+IPA solutions. The factors affecting the etching results, including hydroxide and surfactant concentrations, surface tension and bonds arrangement on (hkl) planes have been analysed