AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been fabricated on V-grooved InP substrates by low pressure metal-organic chemical vapour deposition (MOCVD). We have found growth conditions where the InAIAs barrier exhibits a resharpening effect, similar to that of AlGaAs utilized for growth on GaAs substrates. The existence of structural and electronic quantum wires in the bottom of the grooves is proven
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy ...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been ...
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge st...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical ...
We report on the growth of self-assembled InAs/InP quantum dots (QDs) on the lattice matched GaInAsP...
The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorgani...
Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demons...
Abstract We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111)...
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy ...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
AbstractSingle InGaAs quantum wires and stacked InGaAs quantum wires with InAIAs barriers have been ...
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge st...
A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrate...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
We report the growth of InP/InGaAs core-shell nanowires by metal organic chemical vapour deposition ...
In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical ...
We report on the growth of self-assembled InAs/InP quantum dots (QDs) on the lattice matched GaInAsP...
The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorgani...
Maskless growth of InP wires on planar (100)GaAs substrates by hydride vapor phase epitaxy is demons...
Abstract We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111)...
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy ...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
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