AbstractMid-infrared optoelectronics is now a rapidly expanding research area with many wide ranging applications. This international conference, which is the first of its kind, provides a unique opportunity for the exchange of information on new developments in semiconductor physics, growth technology, characterisation and applications of different materials & devices for the mid-infrared wavelength region
This thesis investigates a range of novel photonic devices and their constituent semiconductor mater...
There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5...
The author discusses the main goals and recent achievements of MPNS COST ACTION MP1204, TERA-MIR Rad...
AbstractMid-infrared optoelectronics is now a rapidly expanding research area with many wide ranging...
The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) waveleng...
This feature issue, based on the OSA Topical meeting on Mid-Infrared Coherent Sources (MICS), focuse...
The mid-infrared (mid-IR, 2 to 10 μm) is a technologically important spectral regime for sensing, im...
AbstractThe University of Lancaster Physics Department has been a centre of excellence for mid-IR ma...
AbstractThe inaugural MOMD international conference was held at Lancaster University on the 17th and...
Due to their good photonic and electronic properties, silicon and germanium have been intensively re...
There are many applications for mid-infrared light sources which has stimulated intensive research i...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
We have investigated several material platforms for the mid-infrared including silicon on insulator ...
8 février 2015International audienceThe mid-infrared (mid-IR, wavelength range between 2 and 10 μm) ...
The mid-infrared (mid-IR, 2.5 to 10 mu m wavelengths) is a strategically important spectral band for...
This thesis investigates a range of novel photonic devices and their constituent semiconductor mater...
There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5...
The author discusses the main goals and recent achievements of MPNS COST ACTION MP1204, TERA-MIR Rad...
AbstractMid-infrared optoelectronics is now a rapidly expanding research area with many wide ranging...
The practical realisation of optoelectronic devices operating in the 2–10 µm (mid-infrared) waveleng...
This feature issue, based on the OSA Topical meeting on Mid-Infrared Coherent Sources (MICS), focuse...
The mid-infrared (mid-IR, 2 to 10 μm) is a technologically important spectral regime for sensing, im...
AbstractThe University of Lancaster Physics Department has been a centre of excellence for mid-IR ma...
AbstractThe inaugural MOMD international conference was held at Lancaster University on the 17th and...
Due to their good photonic and electronic properties, silicon and germanium have been intensively re...
There are many applications for mid-infrared light sources which has stimulated intensive research i...
In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelen...
We have investigated several material platforms for the mid-infrared including silicon on insulator ...
8 février 2015International audienceThe mid-infrared (mid-IR, wavelength range between 2 and 10 μm) ...
The mid-infrared (mid-IR, 2.5 to 10 mu m wavelengths) is a strategically important spectral band for...
This thesis investigates a range of novel photonic devices and their constituent semiconductor mater...
There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5...
The author discusses the main goals and recent achievements of MPNS COST ACTION MP1204, TERA-MIR Rad...