AbstractGaAs manufacturing is moving more towards “silicon like” processes, driven by the need to produce evercheaper devices. This issue we look at dry etching, one of the techniques that is underpinning today's modern compound semiconductor fabs and providing good business for several suppliers
Dry processing - both etching and deposition - and present/future trends in semiconductor technology...
SIGLEAvailable from British Library Document Supply Centre- DSC:D90334 / BLDSC - British Library Doc...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
AbstractGaAs manufacturing is moving more towards “silicon like” processes, driven by the need to pr...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
The paper argues the superiority of the chemical dry-etching process over wet processes for the prod...
This book is a must-have reference to dry etching technology for semiconductors, which will enable e...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
A novel rotating-cell reactor was used to study natural-convection-enhanced tching of GaAs. The etch...
To meet the needs of nanometer scale device fabrication, dry etch technology has been developed. The...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
AbstractDie separation processes for compound semiconductor devices are typically based on either di...
A new HCI:CH3COOH:K2Cr207 system which is particularly suitable for use in etching solutions of GaAs...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
A fast, reproducible, and reliable via hole dry etching process for GaAs monolithic microwave integr...
Dry processing - both etching and deposition - and present/future trends in semiconductor technology...
SIGLEAvailable from British Library Document Supply Centre- DSC:D90334 / BLDSC - British Library Doc...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
AbstractGaAs manufacturing is moving more towards “silicon like” processes, driven by the need to pr...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
The paper argues the superiority of the chemical dry-etching process over wet processes for the prod...
This book is a must-have reference to dry etching technology for semiconductors, which will enable e...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
A novel rotating-cell reactor was used to study natural-convection-enhanced tching of GaAs. The etch...
To meet the needs of nanometer scale device fabrication, dry etch technology has been developed. The...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
AbstractDie separation processes for compound semiconductor devices are typically based on either di...
A new HCI:CH3COOH:K2Cr207 system which is particularly suitable for use in etching solutions of GaAs...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
A fast, reproducible, and reliable via hole dry etching process for GaAs monolithic microwave integr...
Dry processing - both etching and deposition - and present/future trends in semiconductor technology...
SIGLEAvailable from British Library Document Supply Centre- DSC:D90334 / BLDSC - British Library Doc...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
DOI
Add to ORKG