AbstractThe first European Gallium Nitride Workshop (EGW-1) took place in Rigi, Switzerland, on June 2–4 1996. The aim of the workshop was to bring together leading researchers from academia and industry working on gallium nitride and related wide band-gap semiconductors
[Note: This is a draft of a document submitted for publication. Contents of thi
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
AbstractThe preparations for the First European GaN Workshop are complete. A full complement of roug...
AbstractThe first European Gallium Nitride Workshop (EGW-1) took place in Rigi, Switzerland, on June...
AbstractThe past several years have seen GaN move from a research topic to a major segment of the wo...
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-...
AbstractDuring the second week of June, 120 participants converged on Valbonne, France, situated nea...
Gallium Nitride is a key technology with high system impact for European industries for communicatio...
AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second Inte...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
Gallium nitride-based devices look set to have increasingly wide application, at least if the contri...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractIn June of this year the GaN scientific community had a unique opportunity; three continuous...
The development of semiconductor electronics is reviewed briefly, beginning with the development of ...
[Note: This is a draft of a document submitted for publication. Contents of thi
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
AbstractThe preparations for the First European GaN Workshop are complete. A full complement of roug...
AbstractThe first European Gallium Nitride Workshop (EGW-1) took place in Rigi, Switzerland, on June...
AbstractThe past several years have seen GaN move from a research topic to a major segment of the wo...
AbstractThe Spring Materials Research Society meeting in San Francisco included Symposium-T on wide-...
AbstractDuring the second week of June, 120 participants converged on Valbonne, France, situated nea...
Gallium Nitride is a key technology with high system impact for European industries for communicatio...
AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second Inte...
AbstractThe Fall-99 MRS meeting opened in Boston following the traditional Thanksgiving Weekend holi...
Gallium nitride-based devices look set to have increasingly wide application, at least if the contri...
Although not often reported as such, R&D, equipment and materials supply for III-nitride materials a...
AbstractIn June of this year the GaN scientific community had a unique opportunity; three continuous...
The development of semiconductor electronics is reviewed briefly, beginning with the development of ...
[Note: This is a draft of a document submitted for publication. Contents of thi
AbstractTo be published this Spring, the first edition of a new report from the publishers of III–Vs...
The depth of Euronitride research continues to unfold as more results become available and, judging ...
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