AbstractTo apply the nano polycrystalline silicon film (NPSF) to MEMS piezoresistive device effectively, the Young's modulus of the NPSF were tested by in-situ nano mechanical test system, the results show that the Young's modulus of the NPSF is about between 155GPa and 158GPa. According to the specialties of growing and structure of the nano polycrystalline film materials, a theoretical model was presented which is suitable for NPSF. The Young's modulus of the NPSF was calculated by the model, the theoretical result agrees with the experimental result. The theory model is valid and can be applied to analyses of the Young's modulus of other nano polycrystalline film materials
This paper presents a technique to determine the Young’s modulus and residual stress of thin films u...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...
AbstractTo apply the nano polycrystalline silicon film (NPSF) to MEMS piezoresistive device effectiv...
Microelectromechanical systems (MEMS) are part of every modern technological advance. Electrodepo...
Young's modulus Ef of polycrystalline Ag nm-films deposited on hydrogen-terminated Si was measured i...
This paper presents a technique to determine the Young’s modulus and residual stress of thin films u...
Young's modulus Ef of polycrystalline Ag nm-films deposited on hydrogen-terminated Si was measured i...
The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring th...
The Young's modulus of micromechanical silicon films is very different from bulk silicon structu...
The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and...
The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and...
Abstract—The Young’s modulus (E) of a material is a key parameter for mechanical engineering design....
In the present paper, the hardness and Young's modulus of film-substrate systems are determined by m...
Based on the first resonance frequency measurement of multilayer beams, a simple extraction method h...
This paper presents a technique to determine the Young’s modulus and residual stress of thin films u...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...
AbstractTo apply the nano polycrystalline silicon film (NPSF) to MEMS piezoresistive device effectiv...
Microelectromechanical systems (MEMS) are part of every modern technological advance. Electrodepo...
Young's modulus Ef of polycrystalline Ag nm-films deposited on hydrogen-terminated Si was measured i...
This paper presents a technique to determine the Young’s modulus and residual stress of thin films u...
Young's modulus Ef of polycrystalline Ag nm-films deposited on hydrogen-terminated Si was measured i...
The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring th...
The Young's modulus of micromechanical silicon films is very different from bulk silicon structu...
The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and...
The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and...
Abstract—The Young’s modulus (E) of a material is a key parameter for mechanical engineering design....
In the present paper, the hardness and Young's modulus of film-substrate systems are determined by m...
Based on the first resonance frequency measurement of multilayer beams, a simple extraction method h...
This paper presents a technique to determine the Young’s modulus and residual stress of thin films u...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...
With the number of MEMS based applications utilizing porous silicon increasing, it has become more i...