IEDM 2005 will take place in Washington, DC, in early December. It is one of those great shows, a spell-binding, amazing silicon circus. In the big top are packed the pressured performers, having to master new acts of ever increased agility, stability and endurance. Silicon shows the strain in its need of other material assistance. And a host of side shows, big dippers, swings and roundabouts, put compound semiconductors and MEMS devices through paces that lend lustre to the whole performance
IMEC, the blue-chip Belgium silicon-dedicated research laboratory has celebrated its 20th anniversar...
AbstractHaving been soundly introduced to the far-reaching prospects for wide bandgap semiconductors...
AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second Inte...
IEDM 2005 will take place in Washington, DC, in early December. It is one of those great shows, a sp...
AbstractIf one wants to stay on top of new trends, yet retain a proper perspective regarding how the...
Gallium nitride-based devices look set to have increasingly wide application, at least if the contri...
A few years ago a search for the term ‘silicon nitride’ would have generated academic papers, but pr...
AbstractThe fastest silicon-based transistor ever built at 160 GHz; a host of technologies directed ...
SiC and GaN devices have been around for some time. The first dedicated international conference on ...
AbstractGene Fitzgerald of MIT (and Amberwave Inc) discussed the history of strained silicon. He exp...
Silicon Carbide (SiC), Gallium Nitride (GaN) and diamond are examples of wide band gap semiconductor...
International audienceThis presentation will deal with our work on gallium nitride (GaN) devices for...
IMEC's ARMM meeting this year, where it reports the year's developments, was reported to be focusing...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
Conference of 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference Date: 7 Decem...
IMEC, the blue-chip Belgium silicon-dedicated research laboratory has celebrated its 20th anniversar...
AbstractHaving been soundly introduced to the far-reaching prospects for wide bandgap semiconductors...
AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second Inte...
IEDM 2005 will take place in Washington, DC, in early December. It is one of those great shows, a sp...
AbstractIf one wants to stay on top of new trends, yet retain a proper perspective regarding how the...
Gallium nitride-based devices look set to have increasingly wide application, at least if the contri...
A few years ago a search for the term ‘silicon nitride’ would have generated academic papers, but pr...
AbstractThe fastest silicon-based transistor ever built at 160 GHz; a host of technologies directed ...
SiC and GaN devices have been around for some time. The first dedicated international conference on ...
AbstractGene Fitzgerald of MIT (and Amberwave Inc) discussed the history of strained silicon. He exp...
Silicon Carbide (SiC), Gallium Nitride (GaN) and diamond are examples of wide band gap semiconductor...
International audienceThis presentation will deal with our work on gallium nitride (GaN) devices for...
IMEC's ARMM meeting this year, where it reports the year's developments, was reported to be focusing...
AbstractIn spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the...
Conference of 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference Date: 7 Decem...
IMEC, the blue-chip Belgium silicon-dedicated research laboratory has celebrated its 20th anniversar...
AbstractHaving been soundly introduced to the far-reaching prospects for wide bandgap semiconductors...
AbstractExciting developments in GaN-based devices and technology were the focus of the ‘Second Inte...