High performance inverted bulk heterojunction solar cells by incorporation of dense, thin ZnO layers made using atmospheric atomic layer deposition
- Hoye, Robert L.Z.
- Muñoz-Rojas, David
- Iza, Diana C.
- Musselman, Kevin P.
- MacManus-Driscoll, Judith L.
Publication date
September 2013
DOI Publisher
The Authors. Published by Elsevier B.V.Abstract
AbstractA thin ZnO (<200nm) film grown by Atmospheric Atomic Layer Deposition (AALD) in a matter of minutes was studied as a hole-blocking layer in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-buyric acid methyl ester (P3HT:PCBM) based inverted solar cells. These AALD ZnO layers were compact, had a high electron mobility of 3.4+0.1cm2/Vs, had up to 100% transmittance to visible light, and a good wettability for the blend. Despite the very rapid, open atmosphere growth method, the cell performance was comparable with some of the best inverted bulk heterojunction P3HT:PCBM cells in the literature. The performance was also maintained after 200 days of storage in air in the dark
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