AbstractThe CoFeB/MgO films with various boron (B) contents were prepared by sputtering deposition and post annealed with different temperature. It was found that the films become amorphous and coercivity (HC) decreases with the increase of B content for the as-deposited CoFeB/MgO films. After vacuum annealing, the HC decreases because of the film stress release. The HC decreases more obviously in the CoFeB/MgO films with low B contents than that in the films with high B contents. The reason is that the sample with 12.1% B is amorphous before annealing and it becomes crystalline after annealing at 400°C and the sample with 6.7% B is always amorphous before and after annealing, the competition of the effect of film stress and the crystal ani...
Amorphous magnetic CoFeTaBO granular films with different oxygen contents are fabricated by using ma...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...
Schmalhorst J-M, Thomas A, Reiss G, Kou X, Arenholz E. Influence of chemical and magnetic interface ...
AbstractThe CoFeB/MgO films with various boron (B) contents were prepared by sputtering deposition a...
[[abstract]]CoFeB films were deposited on glass substrate by the sputtering method. From x-ray-diffr...
Structural evolution with thermal annealing of the thin film of amorphous Co23Fe60B17 depositors on ...
The investigation of the structural and magnetic properties of bcc Co1-xFex (0.1<x<0.4) alloy films ...
We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta fi...
In search of a magnetic oxide, which is insensitive to oxygen at interfaces and thus appropriate as ...
We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO...
Bhutta K, Reiss G. Magnetoresistance and transport properties of CoFeB/MgO granular systems. JOURNAL...
Co67Fe4Si14.5B14.5 amorphous thin films have been produced by rf sputtering with thickness varying f...
CoFeB/MgO heterostructures are a promising candidate for an integral component of spintronic devices...
Evidence of boron diffusion into the MgO barrier of a CoFeB/MgO based magnetic tunnel junction has b...
A typical body-centered cubic (BCC) CoFe(110) peak was discovered at approximately 2θ = 44.7°. At 2θ...
Amorphous magnetic CoFeTaBO granular films with different oxygen contents are fabricated by using ma...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...
Schmalhorst J-M, Thomas A, Reiss G, Kou X, Arenholz E. Influence of chemical and magnetic interface ...
AbstractThe CoFeB/MgO films with various boron (B) contents were prepared by sputtering deposition a...
[[abstract]]CoFeB films were deposited on glass substrate by the sputtering method. From x-ray-diffr...
Structural evolution with thermal annealing of the thin film of amorphous Co23Fe60B17 depositors on ...
The investigation of the structural and magnetic properties of bcc Co1-xFex (0.1<x<0.4) alloy films ...
We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta fi...
In search of a magnetic oxide, which is insensitive to oxygen at interfaces and thus appropriate as ...
We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO...
Bhutta K, Reiss G. Magnetoresistance and transport properties of CoFeB/MgO granular systems. JOURNAL...
Co67Fe4Si14.5B14.5 amorphous thin films have been produced by rf sputtering with thickness varying f...
CoFeB/MgO heterostructures are a promising candidate for an integral component of spintronic devices...
Evidence of boron diffusion into the MgO barrier of a CoFeB/MgO based magnetic tunnel junction has b...
A typical body-centered cubic (BCC) CoFe(110) peak was discovered at approximately 2θ = 44.7°. At 2θ...
Amorphous magnetic CoFeTaBO granular films with different oxygen contents are fabricated by using ma...
The knowledge of chemical and magnetic conditions at the Co{sub 40}Fe{sub 40}B{sub 20}/MgO interface...
Schmalhorst J-M, Thomas A, Reiss G, Kou X, Arenholz E. Influence of chemical and magnetic interface ...