AbstractIn this work the carrier lifetime evolution of different passivation layers under illumination and at elevated temperatures are investigated. Multicrystalline silicon lifetime samples were treated by implementing typical industrial processing steps. The degradation was found to depend strongly on surface passivation type, but is independent of the surface doping and oxide charge. The influence of the passivation layer on the silicon bulk lifetime degradation is investigated. After reaching a degradation maximum, the lifetime samples feature a regeneration phase. Capacitance-voltage measurements show that the oxide charge is not influenced by the degradation, but a high decrease in carrier lifetime were measured. Firing experiments s...
AbstractWe observe minority carrier lifetime degradation in n-type wafers with boron-diffused surfac...
Different dielectric layers were deposited onto boron doped floatzone silicon wafers and the stabili...
International audienceWe observe minority carrier lifetime degradation in n-type wafers with boron-d...
AbstractIn this work the carrier lifetime evolution of different passivation layers under illuminati...
For solar cell application, the stability of interface passivation quality to in-field conditions is...
Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effec...
Silicon radiation and particle detectors are traditionally passivated with thermal silicon dioxide. ...
AbstractThe passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H(i) on p- and n-type...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
In this study we investigate and compare the influence of two different surface passivation methods ...
AbstractHydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron d...
A central quantity to assess the high quality of monocrystalline silicon (on scales beyond mere puri...
The passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H(i) on p- and n-type silicon...
Hydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped flo...
The stability of passivation layers under the conditions of field application of solar modules is a ...
AbstractWe observe minority carrier lifetime degradation in n-type wafers with boron-diffused surfac...
Different dielectric layers were deposited onto boron doped floatzone silicon wafers and the stabili...
International audienceWe observe minority carrier lifetime degradation in n-type wafers with boron-d...
AbstractIn this work the carrier lifetime evolution of different passivation layers under illuminati...
For solar cell application, the stability of interface passivation quality to in-field conditions is...
Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effec...
Silicon radiation and particle detectors are traditionally passivated with thermal silicon dioxide. ...
AbstractThe passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H(i) on p- and n-type...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
In this study we investigate and compare the influence of two different surface passivation methods ...
AbstractHydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron d...
A central quantity to assess the high quality of monocrystalline silicon (on scales beyond mere puri...
The passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H(i) on p- and n-type silicon...
Hydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped flo...
The stability of passivation layers under the conditions of field application of solar modules is a ...
AbstractWe observe minority carrier lifetime degradation in n-type wafers with boron-diffused surfac...
Different dielectric layers were deposited onto boron doped floatzone silicon wafers and the stabili...
International audienceWe observe minority carrier lifetime degradation in n-type wafers with boron-d...