With the recent introduction of its new line of gallium nitride high-power amplifiers, RF Micro Devices®, Inc. (RFMD®) has provided a product family that can significantly upgrade the efficiency of cellular base stations and similar applications. In doing so, the firm has skillfully leveraged its existing manufacturing facility to produce the GaN amplifiers at marginal cost
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate econom...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
AlGaN/GaN HEMT devices are of high commercial and defense interest for microwave amplification purpo...
With the recent introduction of its new line of gallium nitride high-power amplifiers, RF Micro Devi...
RFMD is a global leader addressing the RF industry’s complex challenges by delivering a broad portfo...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Due to the increased demand of higher data rate transfer and therefore bandwidth, the development of...
AbstractCompound Semiconductor Manufacturing Technology conference (CS ManTech), formerly GaAs ManTe...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
GaN has been widely used to develop devices for high-power and high-frequency applications owing to ...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
Enhancement mode gallium nitride transistors have been commercially available for over three years a...
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate econom...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
AlGaN/GaN HEMT devices are of high commercial and defense interest for microwave amplification purpo...
With the recent introduction of its new line of gallium nitride high-power amplifiers, RF Micro Devi...
RFMD is a global leader addressing the RF industry’s complex challenges by delivering a broad portfo...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Due to the increased demand of higher data rate transfer and therefore bandwidth, the development of...
AbstractCompound Semiconductor Manufacturing Technology conference (CS ManTech), formerly GaAs ManTe...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
GaN has been widely used to develop devices for high-power and high-frequency applications owing to ...
Abstract — A 0.25-µm, production III-Nitride-based high-electron mobility transistor (HEMT) technolo...
The evolution of wide-bandgap semiconductor transistor technology is placed in historical context wi...
Enhancement mode gallium nitride transistors have been commercially available for over three years a...
This paper describes highly-efficient GaN/AlGaN HEMT and MMIC power amplifiers for RF-frequencies be...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate econom...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
AlGaN/GaN HEMT devices are of high commercial and defense interest for microwave amplification purpo...
DOI
Add to ORKG