Spin and phase coherence times in Te doped InSb thin films

AbstractWe investigate the low temperature spin and phase coherence times in Te-doped InSb thin films through measurements of antilocalization. It is found that the extracted spin coherence times range from as long as ∼73ps in films with carrier density n≈0.6×1022m3 down to ∼6ps for n≈8.9×1022m3. The dependence on n indicates that the Elliott-Yafet mechanism is responsible for spin decoherence. The measured spin coherence times are in agreement with theoretical predictions when an appropriately weighed momentum scattering time is used. Extracted phase coherence times are inversely proportional to temperature, consistent with phase decoherence via the Nyquist mechanism