The second and third basic residues of the S4 segment of domain 4 (D4:R2 and D4:R3) of the human skeletal muscle Na+ channel are known to be translocated from a cytoplasmic to an extracellular position during depolarization. Accessibilities of individual S4 residues were assayed by alteration of inactivation kinetics during modification of cysteine mutants by hydrophilic methanethiosulfonate reagents. The voltage dependences of the reaction rates are identical for extracellular application of cationic methanethiosulfonate-ethyltrimethylammonium (MTSET) and anionic methanethiosulfonate-ethylsulfonate (MTSES), suggesting that D4:R3C is situated outside the membrane electric field at depolarized voltages. The absolute rate of R3C modification ...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...
The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a fu...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...
The second and third basic residues of the S4 segment of domain 4 (D4:R2 and D4:R3) of the human ske...
AbstractThe mutation R1448C substitutes a cysteine for the outermost arginine in the fourth transmem...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
AbstractThe mutation R1448C substitutes a cysteine for the outermost arginine in the fourth transmem...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
AbstractVoltage-dependent movement of a sodium channel S4 segment was examined by cysteine scanning ...
This dissertation addressed the question of sodium channel gating. The study began with an investiga...
The fourth segment of domain 4 (S4/D4) in Na+ channels is a voltage sensor especially implicated in ...
Voltage-gated sodium channels play a crucial role in the upstroke of action potentials in electrical...
Voltage-gated sodium channels play a crucial role in the upstroke of action potentials in electrical...
The D4/S4-5 interhelical region plays a role in sodium channel fast inactivation. Examination of S4-...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...
The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a fu...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...
The second and third basic residues of the S4 segment of domain 4 (D4:R2 and D4:R3) of the human ske...
AbstractThe mutation R1448C substitutes a cysteine for the outermost arginine in the fourth transmem...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
AbstractThe mutation R1448C substitutes a cysteine for the outermost arginine in the fourth transmem...
Voltage sensing is due mainly to the movement of positively charged S4 segments through the membrane...
AbstractVoltage-dependent movement of a sodium channel S4 segment was examined by cysteine scanning ...
This dissertation addressed the question of sodium channel gating. The study began with an investiga...
The fourth segment of domain 4 (S4/D4) in Na+ channels is a voltage sensor especially implicated in ...
Voltage-gated sodium channels play a crucial role in the upstroke of action potentials in electrical...
Voltage-gated sodium channels play a crucial role in the upstroke of action potentials in electrical...
The D4/S4-5 interhelical region plays a role in sodium channel fast inactivation. Examination of S4-...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...
The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a fu...
The role of hydrophobic residues in voltage sensors S4 of voltage-sensitive ion channels is less doc...