AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechanism of the IGBT module is analyzed in detail. The more integrative test data is obtained by expanding the temperature range of the accelerated lifetime test. On the basis of considering the current i and the maximal junction temperatureTjmax, an improved lifetime prediction model is obtained through fitting the data of the test. The improved model is more accurate than the existent ones by the analysis and contrast of the test data errors
Due to the wide use of IGBT power semiconductor modules within manifold industrial applications, ana...
This paper presents a series of experiment results on the ageing effects of cyclic junction temperat...
Power electronics, which fully covers the generation, conversion, transmission and usage of electric...
AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechani...
Insulated Gate Bipolar Transistor (IGBT) is the core power device in the fields of railways, new ener...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
In this work we propose a procedure for extrapolating the lifetime of IGBT modules due to bond wire ...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
In this work the reliability of TO-247 IGBT devices is investigated in the case of power cycling str...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system, but its ...
The new energy system with low environmental load will more and more reflect its superiority in urba...
Statistical lifetime models for high-power IGBTs are developed based on results from power-cycling e...
Due to the wide use of IGBT power semiconductor modules within manifold industrial applications, ana...
This paper presents a series of experiment results on the ageing effects of cyclic junction temperat...
Power electronics, which fully covers the generation, conversion, transmission and usage of electric...
AbstractThe theory and method of the accelerated lifetime test is discussed, and the failure mechani...
Insulated Gate Bipolar Transistor (IGBT) is the core power device in the fields of railways, new ener...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
In this work we propose a procedure for extrapolating the lifetime of IGBT modules due to bond wire ...
Lifetime models of high‐power Insulated Gate Bipolar Transistors modules express the number of cycle...
The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
In this work the reliability of TO-247 IGBT devices is investigated in the case of power cycling str...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system, but its ...
The new energy system with low environmental load will more and more reflect its superiority in urba...
Statistical lifetime models for high-power IGBTs are developed based on results from power-cycling e...
Due to the wide use of IGBT power semiconductor modules within manifold industrial applications, ana...
This paper presents a series of experiment results on the ageing effects of cyclic junction temperat...
Power electronics, which fully covers the generation, conversion, transmission and usage of electric...