AbstractWe developed spin vale tunneling magnetoresistance devices based on CoFe-MgO-CoFeB materials capable of sensing magnetic field in wide range. The devices offer magnetic field range up to ±100 mT and down to ±0.4 mT, nonlinearity of 1% of full scale and ultra low hysteresis below 0.025% of full scale. In the largest field range devices show sensitivity up to 0.06%/mT and hysteresis below 0.025% of full scale, while in the lowest field range exhibit sensitivity up to 12%/mT and hysteresis below 2% of FS
Ebke D, Thomas P, Schebaum O, et al. Low B2 crystallization temperature and high tunnel magnetoresis...
This paper describes an experimental study on development of giant magnetoresistance material based ...
A new epitaxial “spin-valve”-type system for low-field magnetoresistive detection is described. This...
In this investigation, the low-frequency alternate-current (AC) magnetic susceptibility (χac) and hy...
The magnetoresistive properties of pinned spin valves (SV) and their roles in low-field sensing appl...
Magnetic tunneling junctions are being widely used for read heads for hard discs, sensors in robotic...
The I−V characteristics of CoFeB/MgO/CoFeB magnetic tunnel junctions show pronounced nonlinearities ...
The sensitivity of tunneling magnetoresistance sensors is an important performance parameter. It dep...
Albon C, Weddemann A, Auge A, Rott K, Hütten A. Tunneling magnetoresistance sensors for high resolut...
Growth and magnetic characterization of thin films of Co2Cr0.6Fe0.4Al and Co2MnSi full-Heusler compo...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Nanomagnetic devices in -The sub-5-nm size range still do not exist, not only because of many fabric...
Applicable magnetic sensors based on nanogranular ferromagnetic materials were developed already mor...
Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external m...
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switch...
Ebke D, Thomas P, Schebaum O, et al. Low B2 crystallization temperature and high tunnel magnetoresis...
This paper describes an experimental study on development of giant magnetoresistance material based ...
A new epitaxial “spin-valve”-type system for low-field magnetoresistive detection is described. This...
In this investigation, the low-frequency alternate-current (AC) magnetic susceptibility (χac) and hy...
The magnetoresistive properties of pinned spin valves (SV) and their roles in low-field sensing appl...
Magnetic tunneling junctions are being widely used for read heads for hard discs, sensors in robotic...
The I−V characteristics of CoFeB/MgO/CoFeB magnetic tunnel junctions show pronounced nonlinearities ...
The sensitivity of tunneling magnetoresistance sensors is an important performance parameter. It dep...
Albon C, Weddemann A, Auge A, Rott K, Hütten A. Tunneling magnetoresistance sensors for high resolut...
Growth and magnetic characterization of thin films of Co2Cr0.6Fe0.4Al and Co2MnSi full-Heusler compo...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Nanomagnetic devices in -The sub-5-nm size range still do not exist, not only because of many fabric...
Applicable magnetic sensors based on nanogranular ferromagnetic materials were developed already mor...
Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external m...
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switch...
Ebke D, Thomas P, Schebaum O, et al. Low B2 crystallization temperature and high tunnel magnetoresis...
This paper describes an experimental study on development of giant magnetoresistance material based ...
A new epitaxial “spin-valve”-type system for low-field magnetoresistive detection is described. This...