AbstractIn this article the business and technology of III–V semiconductor devices will be overviewed. In particular, those based on InP and on GaN. These two materials are both a modern day success story but so far only in optoelectronics. To date, their potential for use in microelectronic devices has yet to migrate successfully from the laboratory into commercial production
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
While InP and the related (lattice matched) compounds are now well established in long wavelength (1...
While InP and the related (lattice matched) compounds are now well established in long wavelength (1...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
The III-Nitride material system finds applications in many optoelectronic and power electronic devic...
The III-Nitride material system finds applications in many optoelectronic and power electronic devic...
The revised edition of this important book presents updated and expanded coverage of light emitting ...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
AbstractIn this article the business and technology of III–V semiconductor devices will be overviewe...
AbstractTremendous progress has been made in recent years in the growth, doping and processing techn...
While InP and the related (lattice matched) compounds are now well established in long wavelength (1...
While InP and the related (lattice matched) compounds are now well established in long wavelength (1...
Improvements in III-nitride technology continue apace in both opto- and microelectronic device perfo...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
The III-Nitride material system finds applications in many optoelectronic and power electronic devic...
The III-Nitride material system finds applications in many optoelectronic and power electronic devic...
The revised edition of this important book presents updated and expanded coverage of light emitting ...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...
This book focuses on three main themes. Theme one - advances in basic science. Point defects, disloc...