A two-dimensional axisymmetric swirling thermal lattice Boltzmann model is presented to study the magnetohydrodynamics (MHD) oscillatory mixed convection in the melt of Czochralski silicon crystal growth in this paper. The governing equations are all solved by lattice Boltzmann method. The D2Q9 model is applied to solve the radial and axial velocities of the melt. Two D2Q5 models are adopted to solve the azimuthal (swirling) velocity and the temperature. The comparison with experiment and finite volume method proves that the presented model can be used as an alternative for simulating the axisymmetric crystal growth. Furthermore, simulations of the melt flow structure and heat transfer under a vertical magnetic field are conducted. And the ...
The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, f...
A free surface problem arising in the Czochralski (CZ) crystal growth process is considered. A mathe...
This review considers the stability of melt motion in two simplified models of semiconductor crystal...
Three-dimensional transient numerical simulations were carried out to investigate the melt convectio...
High-quality silicon crystals provide the basis of many industrial technological advances, including...
International audienceIn order to understand the influence of a semispherical crucible geometry comb...
This paper deals with the mathematical modeling and simulation of crystal growth processes by the so...
A numerical model is developed to perform the dynamic and global simulation of Czochralski growth. T...
Quality of semiconductor and oxide crystals which plays an important role for ectronic deveces are g...
It is a well-known fact that in the Czochralski crystal growth, as well as in all other crystal grow...
The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magne...
AbstractComputational modeling is an essential tool in modern crystal growth technology and developm...
The paper describes a numerical simulation tool for heat and mass transfer processes in large diamet...
International audienceAn analytical study of Czochralski crystal growth problem is presented, theref...
The Czochralski (CZ) process is an art, and as such it requires the experience and luck of the opera...
The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, f...
A free surface problem arising in the Czochralski (CZ) crystal growth process is considered. A mathe...
This review considers the stability of melt motion in two simplified models of semiconductor crystal...
Three-dimensional transient numerical simulations were carried out to investigate the melt convectio...
High-quality silicon crystals provide the basis of many industrial technological advances, including...
International audienceIn order to understand the influence of a semispherical crucible geometry comb...
This paper deals with the mathematical modeling and simulation of crystal growth processes by the so...
A numerical model is developed to perform the dynamic and global simulation of Czochralski growth. T...
Quality of semiconductor and oxide crystals which plays an important role for ectronic deveces are g...
It is a well-known fact that in the Czochralski crystal growth, as well as in all other crystal grow...
The melt flow and temperature distribution in a 200 mm silicon Czochralski furnace with a cusp magne...
AbstractComputational modeling is an essential tool in modern crystal growth technology and developm...
The paper describes a numerical simulation tool for heat and mass transfer processes in large diamet...
International audienceAn analytical study of Czochralski crystal growth problem is presented, theref...
The Czochralski (CZ) process is an art, and as such it requires the experience and luck of the opera...
The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, f...
A free surface problem arising in the Czochralski (CZ) crystal growth process is considered. A mathe...
This review considers the stability of melt motion in two simplified models of semiconductor crystal...