AbstractVapour pressure measurements were performed in terms of a non-isothermal isopiestic method to determine vapour pressures of Cd in the system Cd–Gd between 693 and 1045K. From these results thermodynamic activities of Cd were derived as a function of temperature for the composition range 52–86at.% Cd. By employing an adapted Gibbs–Helmholtz equation, partial molar enthalpies of mixing of Cd were obtained for the corresponding composition range, which were used to convert the activity values of Cd to a common average sample temperature of 773K. The relatively large variation of the activity across the homogeneity ranges of the phases Cd2Gd and Cd45Gd11 indicates that they probably belong to the most stable intermetallic compounds in t...
It has long been recognized that the ternary solid solution system Hg1-xCdxTe(s) is the most importa...
International audienceThe thermodynamic modeling and optimization of Cd–Sb, Sb–Zn binary systems and...
The compounds CdHgTe and its constituent binaries CdTe, HgTe, and CdHg are semiconductors which are ...
AbstractVapour pressure measurements were performed in terms of a non-isothermal isopiestic method t...
Cd vapor pressures were determined over Cd–Nd samples by an isopiestic method. The measurements were...
Cadmium vapor pressures were determined over Ce–Cd samples by an isopiestic method. The measurements...
Vapor pressure measurements, in terms of a (non-)isothermal isopiestic method, were carried out in t...
AbstractThe complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD...
AbstractIn the present study standard enthalpies of formation were measured by reaction and solution...
The complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD, SEM an...
In the present study standard enthalpies of formation were measured by reaction and solution calorim...
AbstractIn the present study standard enthalpies of formation were measured by reaction and solution...
AbstractThe complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD...
The partial pressures of Hg, Cd and Te(,2) are determined for the solid solution, (Hg(,1-x)Cd(,x))(,...
The equilibrium phase diagram of the neodymium–cadmium system has been established by thermal, metal...
It has long been recognized that the ternary solid solution system Hg1-xCdxTe(s) is the most importa...
International audienceThe thermodynamic modeling and optimization of Cd–Sb, Sb–Zn binary systems and...
The compounds CdHgTe and its constituent binaries CdTe, HgTe, and CdHg are semiconductors which are ...
AbstractVapour pressure measurements were performed in terms of a non-isothermal isopiestic method t...
Cd vapor pressures were determined over Cd–Nd samples by an isopiestic method. The measurements were...
Cadmium vapor pressures were determined over Ce–Cd samples by an isopiestic method. The measurements...
Vapor pressure measurements, in terms of a (non-)isothermal isopiestic method, were carried out in t...
AbstractThe complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD...
AbstractIn the present study standard enthalpies of formation were measured by reaction and solution...
The complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD, SEM an...
In the present study standard enthalpies of formation were measured by reaction and solution calorim...
AbstractIn the present study standard enthalpies of formation were measured by reaction and solution...
AbstractThe complete Cd–Gd equilibrium phase diagram was investigated by a combination of powder-XRD...
The partial pressures of Hg, Cd and Te(,2) are determined for the solid solution, (Hg(,1-x)Cd(,x))(,...
The equilibrium phase diagram of the neodymium–cadmium system has been established by thermal, metal...
It has long been recognized that the ternary solid solution system Hg1-xCdxTe(s) is the most importa...
International audienceThe thermodynamic modeling and optimization of Cd–Sb, Sb–Zn binary systems and...
The compounds CdHgTe and its constituent binaries CdTe, HgTe, and CdHg are semiconductors which are ...