AbstractWe theoretically study the electronic structure and spin splitting of a strained GaAs(001) surface with broken twofold symmetry. We introduce a surface electron Hamiltonian of our model. By k·p theory, we qualitatively evaluate the electronic structure of GaAs(001) surface, demonstrating that the spin degeneracy of the bottom of the surface-state conduction bands is split. Additionally, by the spin current operator, we evaluate the spin current of electrons in the bottom of the surface-state conduction bands, demonstrating that for n-type GaAs the spin current flows in the parallel direction to a mirror plane spontaneously. This is a new mechanism to generate the spin current
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...
The microscopic interface asymmetry of (001)-grown semiconductor heterostructures that gives rise to...
We theoretically study the electronic structure and spin splitting of a strained GaAs(001) surface w...
AbstractWe theoretically study the electronic structure and spin splitting of a strained GaAs(001) s...
We present a theory for two recent experiments in bulk strained semiconductors and show that a new, ...
In photoemission of spin-polarized electrons from GaAs-surfaces with negative electron affinity (whe...
We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin ...
Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors...
We calculate evanescent waves in GaAs throughout the forbidden band gap, taking into account both th...
The momentum-dependent spin splitting in the conduction band couples orbital motion to spin and enab...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ap...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...
The microscopic interface asymmetry of (001)-grown semiconductor heterostructures that gives rise to...
We theoretically study the electronic structure and spin splitting of a strained GaAs(001) surface w...
AbstractWe theoretically study the electronic structure and spin splitting of a strained GaAs(001) s...
We present a theory for two recent experiments in bulk strained semiconductors and show that a new, ...
In photoemission of spin-polarized electrons from GaAs-surfaces with negative electron affinity (whe...
We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin ...
Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors...
We calculate evanescent waves in GaAs throughout the forbidden band gap, taking into account both th...
The momentum-dependent spin splitting in the conduction band couples orbital motion to spin and enab...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We have studied the temperature dependence of the spin-flip processes of electrons in p-type mod-ula...
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are ap...
Within the band gap of a semiconductor no electronic propagating states are allowed, but there exist...
We report quantitative experimental and theoretical results revealing the tunability of spin splitti...
The microscopic interface asymmetry of (001)-grown semiconductor heterostructures that gives rise to...