The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to operate at mm-wave atmospheric window frequencies such as 94, 140 and 220 GHz. Results show that the DDR GaP IMPATTs are capable of delivering significantly higher RF power at the above mentioned window frequencies as compared to the DDR IMPATTs based on the conventional narrow bandgap (NBG) base materials such as Si, GaAs and InP
The results of research on the creation and development of microwave radiation sources in the long-w...
Abstract:- The analysis and optimization of the n+pvnp+ avalanche diode have been realized on basis ...
The purpose of this study is to investigate the capabilities of GaAs and InP Gunn devices at high fr...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
Received 18/12/2011, accepted 07/01/2012, online 10/01/2012 The high frequency performance limitatio...
Large-signal simulation is carried out in this paper to investigate the prospects and potentiality o...
Abstract — Current work is presented on the computer based design, study and analysis of InP DDR (Do...
In this paper large-signal modeling and simulation has been carried to study the frequency chirping ...
This investigation is a study of the effects of optical illumination on the behavior of millimeter-w...
The objective of this study is to investigate the performance of heterojunction MITATT (mixed tunnel...
International audienceThe RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat dop...
The effect of optical illumination on DC and dynamic performance of Si1-xGex based double drift regi...
<p>A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. Th...
Abstract—This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18- m st...
Effect of junction temperature on the DC and high-frequency properties of W-band double drift (DDR) ...
The results of research on the creation and development of microwave radiation sources in the long-w...
Abstract:- The analysis and optimization of the n+pvnp+ avalanche diode have been realized on basis ...
The purpose of this study is to investigate the capabilities of GaAs and InP Gunn devices at high fr...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
Received 18/12/2011, accepted 07/01/2012, online 10/01/2012 The high frequency performance limitatio...
Large-signal simulation is carried out in this paper to investigate the prospects and potentiality o...
Abstract — Current work is presented on the computer based design, study and analysis of InP DDR (Do...
In this paper large-signal modeling and simulation has been carried to study the frequency chirping ...
This investigation is a study of the effects of optical illumination on the behavior of millimeter-w...
The objective of this study is to investigate the performance of heterojunction MITATT (mixed tunnel...
International audienceThe RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat dop...
The effect of optical illumination on DC and dynamic performance of Si1-xGex based double drift regi...
<p>A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. Th...
Abstract—This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18- m st...
Effect of junction temperature on the DC and high-frequency properties of W-band double drift (DDR) ...
The results of research on the creation and development of microwave radiation sources in the long-w...
Abstract:- The analysis and optimization of the n+pvnp+ avalanche diode have been realized on basis ...
The purpose of this study is to investigate the capabilities of GaAs and InP Gunn devices at high fr...
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