There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological criteria: performance, low power consumption and hichnist technological and manufacturing process of complex structures BI
Abstract-In the modern VLSI especially for high speed devices, where the conventional MOSFET technol...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
Transistors utilizing real space transfer (RST) have drawn significant attention because RST opens n...
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electron...
Includes bibliographical references (leaves 68-74)Today, being the dawn of a new RF technology wave,...
The features of the formation of microwave GaAs structures are considered and a set of studies is ca...
Abstract — Recent developments in the fabrication of GaAs integrated Schottky structures for applica...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transist...
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
The development of high performance heterostructure transistors is essential for emerging opto-elect...
GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF te...
The role that III-V compound semiconductors will play in the early years of the 21st century will be...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
Abstract-In the modern VLSI especially for high speed devices, where the conventional MOSFET technol...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
Transistors utilizing real space transfer (RST) have drawn significant attention because RST opens n...
Reducing the size of silicon devices is accompanied by an increase in the effective rate of electron...
Includes bibliographical references (leaves 68-74)Today, being the dawn of a new RF technology wave,...
The features of the formation of microwave GaAs structures are considered and a set of studies is ca...
Abstract — Recent developments in the fabrication of GaAs integrated Schottky structures for applica...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transist...
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From ...
HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are str...
The development of high performance heterostructure transistors is essential for emerging opto-elect...
GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF te...
The role that III-V compound semiconductors will play in the early years of the 21st century will be...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
Abstract-In the modern VLSI especially for high speed devices, where the conventional MOSFET technol...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
Transistors utilizing real space transfer (RST) have drawn significant attention because RST opens n...