Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mechanical stress via the piezoresistance effect. Both effects are described by an anisotropic conductivity tensor with small offdiagonal elements. This has led other authors to the conclusion that there is some kind of analogy. In both cases the output voltage depends on the geometry of the device and the size of the contacts. For Hall plates this influence is accounted for by the Hall-geometry factor. The alleged analogy proposes that the Hall-geometry factor also applies to four-terminal stress transducers. This paper shows that the analogy holds only for a limited class of devices. Moreover, it is shown that devices of different geometries may...
The calculation of Hall potentials in a rectangular Hall plate is treated for the case in which the ...
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentratio...
This paper presents a Hall effect sensor fabricated at the Semiconductor & Microsystems Fabrication ...
This paper reports the use of a plate-like four-contact device for the simultaneous measurement of t...
AbstractThis paper reports on the characterization of the stress-dependent magnetic sensitivity of C...
This paper presents for the first time the orientation dependence of the pseudo-Hall effect in p-typ...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
International audienceThe classical Hall effect in ordinary isotropic conducting materials describes...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
none12A number of devices, that are under investigation for implementing and calibrating physical mo...
AbstractA novel Hall device with enhanced magnetosensitivity has been implemented and tested. For th...
AbstractThis paper reports a geometry study to evaluate the influence of design parameters on the pe...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
This paper analyses sensitivity of Hall devices in the horizontal and vertical forms operating in th...
Abstract. A method for calculating the values of specific resistivity ρ as well as the product µHB o...
The calculation of Hall potentials in a rectangular Hall plate is treated for the case in which the ...
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentratio...
This paper presents a Hall effect sensor fabricated at the Semiconductor & Microsystems Fabrication ...
This paper reports the use of a plate-like four-contact device for the simultaneous measurement of t...
AbstractThis paper reports on the characterization of the stress-dependent magnetic sensitivity of C...
This paper presents for the first time the orientation dependence of the pseudo-Hall effect in p-typ...
The Hall effect is the generation of a transverse electromotive force in a sample carrying an electr...
International audienceThe classical Hall effect in ordinary isotropic conducting materials describes...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
none12A number of devices, that are under investigation for implementing and calibrating physical mo...
AbstractA novel Hall device with enhanced magnetosensitivity has been implemented and tested. For th...
AbstractThis paper reports a geometry study to evaluate the influence of design parameters on the pe...
Silicon Hall plates show an offset of a few millitesla. A large portion of this offset is caused by ...
This paper analyses sensitivity of Hall devices in the horizontal and vertical forms operating in th...
Abstract. A method for calculating the values of specific resistivity ρ as well as the product µHB o...
The calculation of Hall potentials in a rectangular Hall plate is treated for the case in which the ...
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentratio...
This paper presents a Hall effect sensor fabricated at the Semiconductor & Microsystems Fabrication ...