In a wide range of values of the resistivity 0.0212 £ r £ 35 Ohm×cm for n-Ge crystals with known crystallographic orientation the ratio M100 2 100 1 M100 2 1 M110 110 M110 º = º , which was predicted by the theory, was experimentally confirmed. The experimentally measured deviations from the relationship M100 2 1 M110 = , which are associated with the heterogeneity of the crystals, it is proposed to use for qualitative assessment of the degree of heterogeneity in the spatial distribution of dopants in the samples. Keywords: germanium, degree of homogeneity, resistivity, magnetic field, magnetoresistance
The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements a...
Hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentratio...
International audienceStrong magnetoresistance reaching thousands of percent and non-monotonic field...
On the crystalsof compensatedp-Ge (with the compensation factor of k = NSb/NGa = 0,5) the transverse...
The transverse magnetoresistance of 5-Ω·cm n-type germanium at different magnetic fields f...
A method is suggested for determining random irregularities in semiconductors. The method is based o...
The longitudinal magnetoresistance and Hall mobility of 5-Ω·cm n-type germanium have been ...
Experimental results on longitudinal magnetoresistance, transverse magnetoresistance and Hall mobili...
Hot-carrier galvanomagnetic phenomena in n-type germanium are studied for the case when the carrier ...
We have grown pure, Co- and V-doped Ge bulk single crystals using the vertical gradient solidificati...
The Faraday rotation, ellipticity and the accompanying magneto-absorption were determined from measu...
The magnetoresistance of 50 nm thick epilayers of doped germanium is measured at a range of temperat...
The use of High Purity Germanium detectors (HPGe) has been planned in some future experiments of had...
The use of High Purity Germanium detectors (HPGe) has been planned in some future experiments of had...
In this paper, the electrical conductivity of a crystal in the presence of a magnetic field is inves...
The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements a...
Hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentratio...
International audienceStrong magnetoresistance reaching thousands of percent and non-monotonic field...
On the crystalsof compensatedp-Ge (with the compensation factor of k = NSb/NGa = 0,5) the transverse...
The transverse magnetoresistance of 5-Ω·cm n-type germanium at different magnetic fields f...
A method is suggested for determining random irregularities in semiconductors. The method is based o...
The longitudinal magnetoresistance and Hall mobility of 5-Ω·cm n-type germanium have been ...
Experimental results on longitudinal magnetoresistance, transverse magnetoresistance and Hall mobili...
Hot-carrier galvanomagnetic phenomena in n-type germanium are studied for the case when the carrier ...
We have grown pure, Co- and V-doped Ge bulk single crystals using the vertical gradient solidificati...
The Faraday rotation, ellipticity and the accompanying magneto-absorption were determined from measu...
The magnetoresistance of 50 nm thick epilayers of doped germanium is measured at a range of temperat...
The use of High Purity Germanium detectors (HPGe) has been planned in some future experiments of had...
The use of High Purity Germanium detectors (HPGe) has been planned in some future experiments of had...
In this paper, the electrical conductivity of a crystal in the presence of a magnetic field is inves...
The g values of rare earth ions obtained from either paramagnetic resonance or Zeeman measurements a...
Hot carrier galvanomagnetic characteristics of n-type germanium of intermediate carrier concentratio...
International audienceStrong magnetoresistance reaching thousands of percent and non-monotonic field...