Physics-based TCAD Simulation of GaN MIS-HEMT Device

[[abstract]]GaN material offers a very good comparative advantage as a candidate for power device material compared to Silicon. The capability to be able to use for high voltage application and high electron mobility are some of the demanded part for either power device or switching device. The use of GaN-on-Si as a substrate for high power transistors is becoming an increasingly common choice, as an affordable large area alternative to expensive bulk substrates. Although there are still significant challenges to be overcome in order to produce high quality devices on these substrates. In order to accelerate the GaN-based device development, simulation and modelling have been commonly used in the research field area. The main problem arising from Sentaurus TCAD simulation tool is the fact that it does not have complete model to predict and explain the behavior of GaN MIS-HEMT device. Impurity implantation (e.g. Fluorine, Nitrogen) database availability, lack of capability to estimate possible defect and trap during process simulation are some of the reason we have to establish strategy to approach real physical phenomena on the GaN-based device. This latter is intended to establish physics-based TCAD simulation methodology for normally on 600V GaN MIS-HEMT device performance verification. Calibration work is based on literature review and GaN wafer experimental data. From the simulation result, the on-state performance of the simulated device is in good agreement with the wafer experimental data. Although, more efforts are still needed for the off-state simulation calibration