Add to ORKGThe possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology of the grown Ge/LT-Ge/Si films. Samples were obtained by the method of molecular-beam epitaxy
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a...
A promising route for growing atomically flat Si on Ge(100) is described. The key to this achievemen...
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...
A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temper...
A Ge film ~6 ml thick was grown on (7×7) reconstructed Si(1 1 1) substrate at room temperature as we...
We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens a...
After a long period of developing integrated circuit technology through simple scaling of silicon de...
Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x...
High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(L...
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degr...
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “thr...
Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge mo...
This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pr...
As the present Si Technology is reaching its physical and technological limits, the trend for the fu...
In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers usin...
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a...
A promising route for growing atomically flat Si on Ge(100) is described. The key to this achievemen...
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...
A study of Ge epilayer growth directly on a Si(001) substrate is presented, following the two temper...
A Ge film ~6 ml thick was grown on (7×7) reconstructed Si(1 1 1) substrate at room temperature as we...
We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens a...
After a long period of developing integrated circuit technology through simple scaling of silicon de...
Reflection high-energy electron diffraction (RHEED) was used to study the evolution of thin GexSi1−x...
High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(L...
A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degr...
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “thr...
Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge mo...
This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pr...
As the present Si Technology is reaching its physical and technological limits, the trend for the fu...
In this work, LPCVD Germanium-Silicon films were deposited on thermally oxidised silicon wafers usin...
High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a...
A promising route for growing atomically flat Si on Ge(100) is described. The key to this achievemen...
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...