Measurements and calculations of capacitances of BJT and SJT made of silicon carbide

In the paper the results of capacitance-voltage (C-V) characteristics measurements of the current controlled BJT and SJT transistors were presented, for which a programmable measuring system manufactured by Keithley was used. The results of measurements was compared with results of the calculations obtained by using the commonly used Gummel-Poon model. For comparison, the results of the measurements found in the literature and in the datasheets of the considered devices were presented as well. The temperature impact on the shape of the considered characteristics was also investigated