A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. This waveform is deduced after careful and extensive study of the performance of these devices. The results presented here indicate the superiority of the performance of the IMPATTs driven by the proposed waveform over that obtained when the same IMPATTs are driven by the conventional sinusoidal waveform. These results are obtained using a full-scale computer simulation program that takes fully into account all the physical effects pertinent to IMPATT operation. In this paper, it is indicated that the superiority of the proposed waveform is attributed to its ability to reduce the bad effects that usually degrade the IMPATT performance such as the...
This thesis examines some aspects of improving the power-added efficiency (PAE) and the third order ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
A very staightforward method has been developed to apply space-charge resistance measurements for de...
<p>A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. Th...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
Abstract: The analysis of LHL Ga As IMPATT Diode structure has been developed on the basis of IMPATT...
This paper is devoted to the characterisation and to the study of the GaAs-FET properties when this ...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time...
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communica...
The purpose of this thesis is to investigate the operation of GaAs field-effect transistors with par...
International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los An...
Received 18/12/2011, accepted 07/01/2012, online 10/01/2012 The high frequency performance limitatio...
The objective of these studies is to develop improved signal and noise models for solid-state microw...
Includes bibliographical references (page 68)This thesis examines the realization of a microwave fee...
This thesis examines some aspects of improving the power-added efficiency (PAE) and the third order ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
A very staightforward method has been developed to apply space-charge resistance measurements for de...
<p>A special waveform is proposed and assumed to be the optimum waveform for p-type GaAs IMPATTs. Th...
The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window ...
Abstract: The analysis of LHL Ga As IMPATT Diode structure has been developed on the basis of IMPATT...
This paper is devoted to the characterisation and to the study of the GaAs-FET properties when this ...
The performance of GaAs SSPA's is crucial to a rapidly increasing number of systems. This tutorial a...
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time...
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communica...
The purpose of this thesis is to investigate the operation of GaAs field-effect transistors with par...
International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los An...
Received 18/12/2011, accepted 07/01/2012, online 10/01/2012 The high frequency performance limitatio...
The objective of these studies is to develop improved signal and noise models for solid-state microw...
Includes bibliographical references (page 68)This thesis examines the realization of a microwave fee...
This thesis examines some aspects of improving the power-added efficiency (PAE) and the third order ...
Abstract:- One of the main problems of high-power microwave semiconductor electronics is design and ...
A very staightforward method has been developed to apply space-charge resistance measurements for de...