An improved simple equation to calculate the minority-carrier effective lifetime in photoconductance measurements is proposed by the perturbation method. When the given constraints are satisfied, the given formulation leads to a fast and accurate determination of effective lifetime from the bulk lifetime, surface recombination velocity, the thickness of the wafer, and diffusion coefficient. Keywords: Photoconductance, Lifetime, Recombination, Perturbation metho
Measurement of recombination and minority-carrier lifetimes has become a very common activity in cur...
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD318-32100...
The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is describ...
Recombination lifetime and diffusion length measured with the photoconductance d cay and surface pho...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
Graduation date: 1986An analytical expression is derived which allows the\ud bulk minority carrier r...
Based on quasi-steady-state photoluminescence, we present an approach to extract minority carrier li...
This paper elaborates upon the theory of self-consistent minority carrier bulk lifetime measurements...
peer reviewedThe knowledge of minority carrier lifetime of a semiconductor is important for the asse...
The application of photoconductance measurements of the effective lifetime of silicon wafers to dete...
Quasi-steady-state photoconductance measurements on silicon ingots and blocks with different photo-g...
Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silic...
The Quasi-Optical Photoconductivity Decay (QO-PCD) technique is developed by UNIST for precise measu...
We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflec...
Measurement of recombination and minority-carrier lifetimes has become a very common activity in cur...
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD318-32100...
The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is describ...
Recombination lifetime and diffusion length measured with the photoconductance d cay and surface pho...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
Graduation date: 1986An analytical expression is derived which allows the\ud bulk minority carrier r...
Based on quasi-steady-state photoluminescence, we present an approach to extract minority carrier li...
This paper elaborates upon the theory of self-consistent minority carrier bulk lifetime measurements...
peer reviewedThe knowledge of minority carrier lifetime of a semiconductor is important for the asse...
The application of photoconductance measurements of the effective lifetime of silicon wafers to dete...
Quasi-steady-state photoconductance measurements on silicon ingots and blocks with different photo-g...
Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silic...
The Quasi-Optical Photoconductivity Decay (QO-PCD) technique is developed by UNIST for precise measu...
We attempted to measure the bulk carrier recombination lifetime of Si wafers by the microwave reflec...
Measurement of recombination and minority-carrier lifetimes has become a very common activity in cur...
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD318-32100...
The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is describ...