Abstract Semiconductor sensors based on nanosized Pd-containing tin dioxide have been obtained by a sol–gel technique. Semiconductor gas-sensitive materials were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) methods. Influence of Pd additives on sensitivity of the sensors to methane has been studied. Temperature dependences of electrical resistance in air and sensor response to methane on palladium content for the sensors based on nanosized materials Pd/SnO2 have been investigated
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Abstract Metal oxide sensors were created using nanosized tin dioxide obtained by a sol-gel method. ...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
This study is devoted to creation of metal oxide semiconductor (MOS) materials for gas sensor array ...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
Recently, there has been an increasing interest in the electronics world for those aspects related t...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
Abstract Metal oxide sensors were created using nanosized tin dioxide obtained by a sol-gel method. ...
Nanosized semiconductor sensor materials based on SnO2 with different palladium contents were obtain...
This study is devoted to creation of metal oxide semiconductor (MOS) materials for gas sensor array ...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
Recently, there has been an increasing interest in the electronics world for those aspects related t...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
International audienceThis study is devoted to creation of metal oxide semiconductor (MOS) materials...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...