The aim of this work is to determine the influence of medium frequency magnetron sputtering powers on the various properties of hafnium dioxide (HfO2) thin films. Microstructure observations show that an increase in the sputtering power has a significant influence on HfO2 films’ microstructure. As-deposited hafnia thin films exhibit nanocrystalline structure with a monoclinic phase, however the rise of the sputtering power results in an increase of crystallite sizes. Atomic force microscopy investigations show that the surface of the deposited films is smooth, crack-free, and composed of visible grains. The surface roughness and the value of the water contact angle increase with the increase of the sputtering power. Measurements of th...
Hafnium dioxide HfO2 is a candidate with promising properties for semiconductor industries as well a...
High-kappa hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron ...
[[abstract]]The W-doped HfO2 (HfO2:W) films were prepared by simultaneous RF magnetron sputtering of...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Hafnium oxide (HfO2 or hafnia) holds promise as a high-index dielectric in optical devices and therm...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Thin films of hafnium oxide ( HfO2) have been grown by high pressure reactive sputtering on transpar...
The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure...
In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio fr...
We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compo...
The physical and electrical properties of hafnium oxide HfO2 thin films deposited by High Pressure...
[[abstract]]氧化鉿(HfO2)薄膜是被廣泛研究的光學薄膜,在光學元件上也有相當多的應用。HfO2薄膜的性質深受其製備方法和製備參數的影響,為了在低溫製程裡,獲得具疏水特性的HfO2光學薄膜...
Hafnium oxide (HfO2) based dielectrics have been currently considered as the possible replacements f...
The effects of reactive and sputtering oxygen partial pressure on the structure, stoichiometry and o...
Hafnium oxide (HfO2) based dielectrics have been currently considered as the possible replacements f...
Hafnium dioxide HfO2 is a candidate with promising properties for semiconductor industries as well a...
High-kappa hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron ...
[[abstract]]The W-doped HfO2 (HfO2:W) films were prepared by simultaneous RF magnetron sputtering of...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Hafnium oxide (HfO2 or hafnia) holds promise as a high-index dielectric in optical devices and therm...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Thin films of hafnium oxide ( HfO2) have been grown by high pressure reactive sputtering on transpar...
The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure...
In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio fr...
We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compo...
The physical and electrical properties of hafnium oxide HfO2 thin films deposited by High Pressure...
[[abstract]]氧化鉿(HfO2)薄膜是被廣泛研究的光學薄膜,在光學元件上也有相當多的應用。HfO2薄膜的性質深受其製備方法和製備參數的影響,為了在低溫製程裡,獲得具疏水特性的HfO2光學薄膜...
Hafnium oxide (HfO2) based dielectrics have been currently considered as the possible replacements f...
The effects of reactive and sputtering oxygen partial pressure on the structure, stoichiometry and o...
Hafnium oxide (HfO2) based dielectrics have been currently considered as the possible replacements f...
Hafnium dioxide HfO2 is a candidate with promising properties for semiconductor industries as well a...
High-kappa hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron ...
[[abstract]]The W-doped HfO2 (HfO2:W) films were prepared by simultaneous RF magnetron sputtering of...