Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at substrate temperatures (473 K) by flash evaporation. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane .The particle size increases with the increase of annealing time .The transmission spectra of prepared samples were found to be in the range (400-5000 cm-1 ) from FTIR study . This indicates that the crystallinity is improved in the films deposited at higher annealing time
This report intends to present the research results obtained by the author in Final Year Project No....
Electrical conductivity and thermoelectric power of flash evaporated amorphous films of InSb and GaA...
In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth su...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
Thin films of InSb are important for modern electronic applications. When these films are prepared b...
339-346In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were d...
339-346Thin films of InSb nanocrystals have been deposited onto KCl substrate using a thermal evapo...
Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range o...
InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation te...
Thin films of InSb with different thickness (t = 5, 10 and 15 kÅ) were deposited on to glass substr...
The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by electron be...
557-561The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by elect...
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected ...
Thin films of Indium sulphide are deposited on corning glass substrate by thermal evaporation at roo...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
This report intends to present the research results obtained by the author in Final Year Project No....
Electrical conductivity and thermoelectric power of flash evaporated amorphous films of InSb and GaA...
In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth su...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
Thin films of InSb are important for modern electronic applications. When these films are prepared b...
339-346In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were d...
339-346Thin films of InSb nanocrystals have been deposited onto KCl substrate using a thermal evapo...
Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range o...
InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation te...
Thin films of InSb with different thickness (t = 5, 10 and 15 kÅ) were deposited on to glass substr...
The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by electron be...
557-561The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by elect...
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected ...
Thin films of Indium sulphide are deposited on corning glass substrate by thermal evaporation at roo...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
This report intends to present the research results obtained by the author in Final Year Project No....
Electrical conductivity and thermoelectric power of flash evaporated amorphous films of InSb and GaA...
In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth su...