The growth of one-dimensional nanostructures without a metal catalyst via a simple solution method is of considerable interest due to its practical applications. In this study, the growth of amorphous silicon (a-Si) nanotips was investigated using an aqueous solution dropped onto the Si substrate, followed by drying at room temperature or below for 24 h, resulting in the formation of a-Si nanotips on the Si substrate. Typically, the a-Si nanotips were up to 1.6 μm long, with average top and middle diameters of 30 and 80 nm, respectively, and contained no metal catalyst in their structure. The growth of a-Si nanotips can be explained in terms of the liquid−solid mechanism, where the supercritical Si solution (liquid) generated on ...
Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 degreesC un...
A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at t...
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms ...
Amorphous silicon nanowires (a-SiNW) with an average diameter of ca. 20 nm were synthesized at about...
Amorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at a...
Amorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at a...
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an N...
The formation of silicon nanofilms can be described using an approach of nucleation and island growt...
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms ...
Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control...
In this paper we describe the production of nanocrystals of silicon embedded in an amorphous silicon...
Freeze fracturing is applied to make the wetting behavior of artificially nanopatterned Si surfaces ...
Abstract. High-yield synthesis of amorphous silicon oxide nanoropes (SiONRs) was achieved by using s...
Highly oriented silicon nanowires were grown on Si (111) substrate via a solid-liquid-solid (SLS) me...
Mit der vorliegenden Arbeit wird das Wachstum von polykristallinem Silicium auf Glas bei niedrigen T...
Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 degreesC un...
A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at t...
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms ...
Amorphous silicon nanowires (a-SiNW) with an average diameter of ca. 20 nm were synthesized at about...
Amorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at a...
Amorphous silicon nanowires (a-SiNW's) with average diameter around 20 nm were synthesized at a...
Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an N...
The formation of silicon nanofilms can be described using an approach of nucleation and island growt...
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms ...
Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control...
In this paper we describe the production of nanocrystals of silicon embedded in an amorphous silicon...
Freeze fracturing is applied to make the wetting behavior of artificially nanopatterned Si surfaces ...
Abstract. High-yield synthesis of amorphous silicon oxide nanoropes (SiONRs) was achieved by using s...
Highly oriented silicon nanowires were grown on Si (111) substrate via a solid-liquid-solid (SLS) me...
Mit der vorliegenden Arbeit wird das Wachstum von polykristallinem Silicium auf Glas bei niedrigen T...
Amorphous Si nanowires were grown on an Au-coated Si substrate by heat treatment at 1000 degreesC un...
A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at t...
Silicon clusters were produced by sputtering of a p-doped Si target and aggregation of the Si atoms ...