Transition metal dichalcogenides (TMDCs) demonstrate great potential in numerous applications. However, these applications require a precise control of layer thickness at the atomic scale. In this work, we present an in-situ study of the self-limiting oxidation process in MoTe2 by ozone (O3) treatment. A precise layer-by-layer control of MoTe2 flakes can be achieved via multiple cycles of oxidation and wet etching. The thinned MoTe2 flakes exhibit comparable optical properties and film quality to the pristine exfoliated ones. Besides, an additional p-type doping is observed after O3 oxidation. Such a p-doping effect converts the device properties of MoTe2 from electron-dominated to hole-dominated ambipolar characteristics
Solution-processed molybdenum oxide (MoO3-x) is a promising material for charge transport layer in o...
Thermal atomic layer etching (ALE) of molybdenum (Mo) was demonstrated using sequential exposures of...
© 2021 American Chemical Society.Preparation of edge-rich two-dimensional (2D) transition metal dich...
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate ...
Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owin...
A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to...
The electronic, catalytic, and optical properties of transition metal dichalcogenides (TMDs) are sig...
Minor structural changes in transition metal dichalcogenides can have dramatic effects on their elec...
International audienceIn the present study, MoO3:MoS2 hybrid thin layers have been synthesized throu...
We report on the MoO3 oxides and their derivatives on microscopic 2H MoS2 flakes oxidized in air and...
Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced...
Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using...
Because of profound applications of MoS<sub>2</sub> crystals in electronics, their microscale oxidat...
This is the final version. Available on open access from Wiley via the DOI in this recordA highly ef...
Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalco...
Solution-processed molybdenum oxide (MoO3-x) is a promising material for charge transport layer in o...
Thermal atomic layer etching (ALE) of molybdenum (Mo) was demonstrated using sequential exposures of...
© 2021 American Chemical Society.Preparation of edge-rich two-dimensional (2D) transition metal dich...
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate ...
Transition metal dichalcogenides (TMDs) are promising candidates for the semiconductor industry owin...
A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to...
The electronic, catalytic, and optical properties of transition metal dichalcogenides (TMDs) are sig...
Minor structural changes in transition metal dichalcogenides can have dramatic effects on their elec...
International audienceIn the present study, MoO3:MoS2 hybrid thin layers have been synthesized throu...
We report on the MoO3 oxides and their derivatives on microscopic 2H MoS2 flakes oxidized in air and...
Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced...
Due to the chemically inert surface of MoS2, uniform deposition of ultrathin high-κ dielectric using...
Because of profound applications of MoS<sub>2</sub> crystals in electronics, their microscale oxidat...
This is the final version. Available on open access from Wiley via the DOI in this recordA highly ef...
Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalco...
Solution-processed molybdenum oxide (MoO3-x) is a promising material for charge transport layer in o...
Thermal atomic layer etching (ALE) of molybdenum (Mo) was demonstrated using sequential exposures of...
© 2021 American Chemical Society.Preparation of edge-rich two-dimensional (2D) transition metal dich...