Trabajo presentado en el SPIE Octo: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII, celebrado en San Francisco (California, Estado Unidos), del 27 de enero al 1 de febrero de 2018Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that would significantly enhance the performance of 3- and 4-junction solar cells. However, growth problems inherent to this quaternary alloy lead typically to a poor crystal quality that limits its applicability. Better compositional control and crystal quality have been recently reported by growing the material as a GaAsSb/GaAsN superlattice, because of the spatial separation of Sb and N that avoid miscibility problems. Moreover, these structures...
International audienceAim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-J...
Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar ce...
Abstract As promising candidates for solar cell and photodetection applications in the range 1.0–1.1...
Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that wou...
We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-m...
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energie...
International audienceSingle-junction InGaNAs solar cells were grown by MBE with active layers based...
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investi...
Multi-junction solar cells (MJSCs) have achieved the highest solar power conversion efficiency to da...
The third-generation solar cell technologies are aiming to achieve substantially higher efficiency o...
Multi-junction solar cells, according to the detailed balance limit, should be able to achieve effic...
International audienceThis article reports on the impact of the thickness and/or the composition on ...
International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-...
International audienceAim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-J...
Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar ce...
Abstract As promising candidates for solar cell and photodetection applications in the range 1.0–1.1...
Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that wou...
We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-m...
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energie...
International audienceSingle-junction InGaNAs solar cells were grown by MBE with active layers based...
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investi...
Multi-junction solar cells (MJSCs) have achieved the highest solar power conversion efficiency to da...
The third-generation solar cell technologies are aiming to achieve substantially higher efficiency o...
Multi-junction solar cells, according to the detailed balance limit, should be able to achieve effic...
International audienceThis article reports on the impact of the thickness and/or the composition on ...
International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-...
International audienceAim and approach-Tunnel Junctions (TJs) are key devices for monolithic Multi-J...
Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar ce...
Abstract As promising candidates for solar cell and photodetection applications in the range 1.0–1.1...