Atomic-layer deposition (ALD) of metal-sulfide thin films has recently been developing very fast, and many new metal-sulfide ALD processes have emerged during the past several years. Surface chemistry plays a key role in ALD, but it remains yet to be investigated for many recently developed sulfide ALD processes. We herein report our study on the surface chemistry of the ALD of nickel sulfide from bis(N,N′-di-tert-butylacetamidinato)nickel(II) and H2S, using the in situ characterization techniques of X-ray photoelectron spectroscopy, low-energy ion scattering, quartz crystal microbalance, and quadrupole mass spectrometry. The surface chemistry is found to deviate from the conventional ligand-exchange ALD scheme, and a formation of a nonv...
Atomic layer deposition (ALD) is a layer-by-layer synthesis method capable of depositing conformal t...
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
ABSTRACT: Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its ...
Atomic layer deposition (ALD) is a highly useful technique to grow thin film materials, and the init...
Nickel sulfide (NiS) is grown by atomic layer deposition (ALD) using sequential exposures of bis(2,2...
Transition metal sulfides show great promise for applications ranging from catalysis to electrocatal...
Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide ...
Atomic layer deposition (ALD) is a thin film growth technique that relies on self-limiting reactions...
Vapor-phase atomic layer deposition (ALD) of nickel sulfide (NiSx) is comprehensively reported for t...
Conspectus The deposition of thin solid films is central to many industrial applications, and chemic...
The sharpness of interfaces in multilayer metal–sulfide thin films synthesized by atomic layer depos...
Vapor-phase atomic layer deposition (ALD) of nickel sulfide (NiS<sub><i>x</i></sub>) is comprehensiv...
SSCI-VIDE+ING+MZH:EQDInternational audienceElongated nanostructures with a high-aspect-ratio are kno...
A novel self-terminating chemical approach for the deposition of WS2 by atomic layer deposition base...
The thermal chemistry of copper(I)-N,N′-di-sec-butylacetamidinate on Ni(110) single-crystal and coba...
Atomic layer deposition (ALD) is a layer-by-layer synthesis method capable of depositing conformal t...
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
ABSTRACT: Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its ...
Atomic layer deposition (ALD) is a highly useful technique to grow thin film materials, and the init...
Nickel sulfide (NiS) is grown by atomic layer deposition (ALD) using sequential exposures of bis(2,2...
Transition metal sulfides show great promise for applications ranging from catalysis to electrocatal...
Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide ...
Atomic layer deposition (ALD) is a thin film growth technique that relies on self-limiting reactions...
Vapor-phase atomic layer deposition (ALD) of nickel sulfide (NiSx) is comprehensively reported for t...
Conspectus The deposition of thin solid films is central to many industrial applications, and chemic...
The sharpness of interfaces in multilayer metal–sulfide thin films synthesized by atomic layer depos...
Vapor-phase atomic layer deposition (ALD) of nickel sulfide (NiS<sub><i>x</i></sub>) is comprehensiv...
SSCI-VIDE+ING+MZH:EQDInternational audienceElongated nanostructures with a high-aspect-ratio are kno...
A novel self-terminating chemical approach for the deposition of WS2 by atomic layer deposition base...
The thermal chemistry of copper(I)-N,N′-di-sec-butylacetamidinate on Ni(110) single-crystal and coba...
Atomic layer deposition (ALD) is a layer-by-layer synthesis method capable of depositing conformal t...
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
ABSTRACT: Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its ...