In situ transmission electron microscopy investigation of structural transformation in III–V nanowires is essential for providing direct insight into the structural stability of III–V nanowires under elevated temperature. In this study, through in situ heating investigation in a transmission electron microscope, the detailed structural transformation of InAs nanowires from wurtzite structure to zinc-blende structure at the catalyst/nanowire interface is witnessed on the atomic level. Through detailed structural and dynamic analysis, it was found that the nucleation site of each new layer of InAs and catalyst surface energy play a decisive role in the growth of the zinc-blende structure. This study provides new insights into the growth mecha...
Themechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs n...
While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowire...
International audienceThe shape of InAs nanostructures formed by molecular beam epitaxy on a (001) I...
In situ transmission electron microscopy investigation of structural transformation in III–V nanowir...
In situ transmission electron microscopy investigation of structural transformation in III-V nanowir...
In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a...
Abstract. We present a preliminary study of the in situ heating of InAs nanowires in a gaseous envir...
In situ high-resolution transmission electron microscopy revealed the precipitation of the zinc-blen...
Live observations of growing nanowires using in situ transmission electron microscopy (TEM) is becom...
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. ...
We demonstrate that the crystal structure of InAs nanowires can be controlled with nanowire diameter...
We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a tra...
We demonstrate that the crystal structure of InAs nanowires call be controlled with nanowire diamete...
We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a tra...
Molecular beam epitaxy growth of merging InAs nanowire intersections, that is, a first step toward t...
Themechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs n...
While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowire...
International audienceThe shape of InAs nanostructures formed by molecular beam epitaxy on a (001) I...
In situ transmission electron microscopy investigation of structural transformation in III–V nanowir...
In situ transmission electron microscopy investigation of structural transformation in III-V nanowir...
In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a...
Abstract. We present a preliminary study of the in situ heating of InAs nanowires in a gaseous envir...
In situ high-resolution transmission electron microscopy revealed the precipitation of the zinc-blen...
Live observations of growing nanowires using in situ transmission electron microscopy (TEM) is becom...
Crystal structure and defects have been shown to have a strong impact on III-V nanowire properties. ...
We demonstrate that the crystal structure of InAs nanowires can be controlled with nanowire diameter...
We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a tra...
We demonstrate that the crystal structure of InAs nanowires call be controlled with nanowire diamete...
We demonstrate the growth and structural characteristics of InAs nanowire junctions evidencing a tra...
Molecular beam epitaxy growth of merging InAs nanowire intersections, that is, a first step toward t...
Themechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs n...
While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowire...
International audienceThe shape of InAs nanostructures formed by molecular beam epitaxy on a (001) I...