An Optically Gated Transistor Composed of Amorphous M + Ge₂Se₃ (M = Cu or Sn) for Accessing and Continuously Programming a Memristor

We demonstrate that a device composed of sputtered amorphous chalcogenide Ge2Se3/M + Ge2Se3 (M = Sn or Cu) alternating layers functions as an optically gated transistor (OGT) and can be used as an access transistor for a memristor memory element. This transistor has only two electrically connected terminals (source and drain), with the gate being optically controlled, thus allowing the transistor to operate only in the presence of light (385–1200 nm). The switching speed of the OGTs is