CuFeO2, the structure prototype of the delafossite family, has received renewed interest in recent years. Thermodynamic modeling and several experimental Cu–Fe–O system investigations did not focus specifically on the possible nonstoichiometry of this compound, which is, nevertheless, a very important optimization factor for its physicochemical properties. In this work, through a complete set of analytical and thermostructural techniques from 50 to 1100 °C, a fine reinvestigation of some specific regions of the Cu–Fe–O phase diagram under air was carried out to clarify discrepancies concerning the delafossite CuFeO2 stability region as well as the eutectic composition and temperature for the reaction L = CuFeO2 + Cu2O. Differential thermal ...
The magnetic susceptibility of and hyperfine interactions in the hexagonal 2H polymorph of delafossi...
Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray p...
Delafossite CuFeO2 is an intrinsic p-type semiconductor with a band gap around 1.5 eV. Further, it i...
CuFeO2, the structure prototype of the delafossite family, has received renewed interest in recent y...
International audienceIn this work, different CuFe1-xCrxO2 compositions with 0<=x<=1 were prepared b...
Oxide-based materials are promising candidates for use in high temperature thermoelectric generators...
Summary. Oxides of the Cu-Fe-O system prepared by solid-state reaction methods have been investigate...
In the present study the stability of the phases pertaining to the Cu–Fe–S–O–H compositional system ...
Effects of oxygen off-stoichiometry have been investigated on CuFeO2+d delafossite-type powders prep...
Cuprous delafossites exhibit exceptional electrical, magnetic, optical, and catalytic properties. Th...
Ce travail de thèse multidisciplinaire a été dédié à l’étude des phases CuMO2 avec M = {Cr et Fe} de...
This multidisciplinary thesis work was dedicated to the study of CuMO2 phases with M = {Cr and Fe} o...
peer reviewedThe magnetic susceptibility of and hyperfine interactions in the hexagonal 2H polymorph...
Summary. Two new microanalyses of delafossite from Nizhnii Tagil (the type locality) and Kimberly, N...
The research into materials for use as cathode materials for solid oxide fuel cells (SOFC) is ongoi...
The magnetic susceptibility of and hyperfine interactions in the hexagonal 2H polymorph of delafossi...
Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray p...
Delafossite CuFeO2 is an intrinsic p-type semiconductor with a band gap around 1.5 eV. Further, it i...
CuFeO2, the structure prototype of the delafossite family, has received renewed interest in recent y...
International audienceIn this work, different CuFe1-xCrxO2 compositions with 0<=x<=1 were prepared b...
Oxide-based materials are promising candidates for use in high temperature thermoelectric generators...
Summary. Oxides of the Cu-Fe-O system prepared by solid-state reaction methods have been investigate...
In the present study the stability of the phases pertaining to the Cu–Fe–S–O–H compositional system ...
Effects of oxygen off-stoichiometry have been investigated on CuFeO2+d delafossite-type powders prep...
Cuprous delafossites exhibit exceptional electrical, magnetic, optical, and catalytic properties. Th...
Ce travail de thèse multidisciplinaire a été dédié à l’étude des phases CuMO2 avec M = {Cr et Fe} de...
This multidisciplinary thesis work was dedicated to the study of CuMO2 phases with M = {Cr and Fe} o...
peer reviewedThe magnetic susceptibility of and hyperfine interactions in the hexagonal 2H polymorph...
Summary. Two new microanalyses of delafossite from Nizhnii Tagil (the type locality) and Kimberly, N...
The research into materials for use as cathode materials for solid oxide fuel cells (SOFC) is ongoi...
The magnetic susceptibility of and hyperfine interactions in the hexagonal 2H polymorph of delafossi...
Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray p...
Delafossite CuFeO2 is an intrinsic p-type semiconductor with a band gap around 1.5 eV. Further, it i...