International audienceDewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct evidence of such diffusion was demonstrated. Moreover, these models are usually dealing with elemental materials and not with compounds in which several elements can diffuse. The mechanisms behind agglomeration of polycrystalline compounds thin film are still not fully understood. In this work, Si isotope multilayers coupled with atom probe tomography (APT) are used to reveal the agglomeration mechanism of NiSi, a binarycompound. ...
Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three sil...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si-rich acti...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...
International audienceDewetting or agglomeration is a crucial process in material science since it c...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
Chemical diffusion and interlayer formation in thin layers and at interfaces is of increasing influe...
International audienceThe silicide formation and the redistribution of Pt after deposition and after...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
Avec la réduction de taille des composants microélectroniques, le monosiliciure de nickel (NiSi) a é...
International audienceIn this paper, the in-situ Scanning Electron Microscopy (in-situ SEM) techniqu...
This present work is about the morphological evolution of a solid material considering the diffusion...
Phase nucleation in sharp concentration gradient and the beginning of phase growth is investigated i...
Atomic resolved imaging techniques have provided us with an exciting view on how atoms or clusters o...
La première partie de mes résultats concerne les phénomènes de diffusion induits par des effets de c...
Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three sil...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si-rich acti...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...
International audienceDewetting or agglomeration is a crucial process in material science since it c...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
Chemical diffusion and interlayer formation in thin layers and at interfaces is of increasing influe...
International audienceThe silicide formation and the redistribution of Pt after deposition and after...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
Avec la réduction de taille des composants microélectroniques, le monosiliciure de nickel (NiSi) a é...
International audienceIn this paper, the in-situ Scanning Electron Microscopy (in-situ SEM) techniqu...
This present work is about the morphological evolution of a solid material considering the diffusion...
Phase nucleation in sharp concentration gradient and the beginning of phase growth is investigated i...
Atomic resolved imaging techniques have provided us with an exciting view on how atoms or clusters o...
La première partie de mes résultats concerne les phénomènes de diffusion induits par des effets de c...
Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three sil...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si-rich acti...
Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transp...